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FJP5021RVTU

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FJP5021RVTU

TRANS NPN 500V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJP5021RVTU is an NPN bipolar junction transistor designed for power applications. Featuring a 500V collector-emitter breakdown voltage and a continuous collector current rating of 5A, this device offers a maximum power dissipation of 50W. Its transition frequency is 18MHz, with a minimum DC current gain (hFE) of 15 at 600mA and 5V. The saturation voltage (Vce(sat)) is a maximum of 1V at 600mA base current and 3A collector current. Collector cutoff current (ICBO) is rated at a maximum of 10µA. This component is supplied in a TO-220-3 package for through-hole mounting, with an operating junction temperature up to 150°C. It is commonly utilized in power supply, motor control, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 600mA, 3A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 600mA, 5V
Frequency - Transition18MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)500 V
Power - Max50 W

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