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FJP5021RTU

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FJP5021RTU

TRANS NPN 500V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi FJP5021RTU is a high-voltage NPN bipolar junction transistor designed for power switching applications. This component features a 500V collector-emitter breakdown voltage and a continuous collector current rating of 5A, with a maximum power dissipation of 50W. The transistor exhibits a transition frequency of 18MHz and a minimum DC current gain (hFE) of 15 at 600mA collector current. The saturation voltage (Vce(sat)) is specified at 1V maximum for a collector current of 3A and base current of 600mA. The device is housed in a standard TO-220-3 package, facilitating through-hole mounting. It is suitable for use in power supply circuits, lighting ballasts, and general-purpose high-voltage switching applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 600mA, 3A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 600mA, 5V
Frequency - Transition18MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)500 V
Power - Max50 W

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