FJP5021O
TRANS NPN 500V 5A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJP5021O is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding power applications. This component features a 500V collector-emitter breakdown voltage (Vce) and a continuous collector current capability of 5A, with a maximum power dissipation of 50W. The FJP5021O exhibits a transition frequency of 18MHz and a minimum DC current gain (hFE) of 20 at 600mA collector current and 5V Vce. Its saturation voltage (Vce(sat)) is rated at a maximum of 1V at 600mA base current and 3A collector current. With a maximum operating junction temperature of 150°C, this transistor is suitable for through-hole mounting in a standard TO-220-3 package. Applications include power supply circuits, lighting ballasts, and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 600mA, 5V |
| Frequency - Transition | 18MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| Power - Max | 50 W |
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