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FJP3307DTU

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FJP3307DTU

TRANS NPN 400V 8A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJP3307DTU is a high-voltage NPN bipolar junction transistor designed for demanding applications. This component features a 400V collector-emitter breakdown voltage (V(BR)CEO) and a maximum continuous collector current (IC) of 8A, with a significant power dissipation capability of 80W. The DC current gain (hFE) is specified at a minimum of 5 at 5A collector current and 5V VCE. It offers a VCE(sat) of 3V at 2A collector current and 8A base current. The FJP3307DTU is packaged in a TO-220-3 through-hole configuration, suitable for robust thermal management. This transistor finds application in power supply circuits, lighting control, and motor driving within industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A, 5V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max80 W

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