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FJP3305H2

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FJP3305H2

TRANS NPN 400V 4A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJP3305H2 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power applications. Featuring a maximum collector voltage (Vceo) of 400V and a continuous collector current (Ic) capability of 4A, this device excels in power switching and amplification circuits. Its power dissipation rating of 75W and a transition frequency of 4MHz make it suitable for demanding applications in industrial motor control, power supplies, and lighting systems. The FJP3305H2 is housed in a standard TO-220-3 package, facilitating easy through-hole mounting. Key electrical specifications include a low Vce(sat) of 1V at 1A/4A and a collector cutoff current (Icbo) of 1µA. The device exhibits a minimum DC current gain (hFE) of 26 at 1A and 5V, ensuring efficient operation across a range of current levels.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 4A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce26 @ 1A, 5V
Frequency - Transition4MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max75 W

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