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FJP3305H1

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FJP3305H1

TRANS NPN 400V 4A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi FJP3305H1 NPN Bipolar Junction Transistor. This through-hole, TO-220-3 packaged device offers a 400V collector-emitter breakdown voltage with a maximum collector current of 4A. Featuring a transition frequency of 4MHz and a power dissipation capability of 75W, it exhibits a minimum DC current gain (hFE) of 19 at 1A collector current and 5V collector-emitter voltage. The saturation voltage (Vce Saturation) is specified at 1V maximum at 1A base current and 4A collector current. Applications include power switching and general-purpose amplification in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 4A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce19 @ 1A, 5V
Frequency - Transition4MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max75 W

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