FJP13009H2
TRANS NPN 400V 12A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJP13009H2 is an NPN bipolar junction transistor (BJT) designed for high-voltage, high-current applications. Featuring a 400V collector-emitter breakdown voltage and a maximum collector current of 12A, this device is built for robust performance. Its 100W power dissipation and 4MHz transition frequency make it suitable for demanding power supply circuits, lighting control, and consumer electronics. The FJP13009H2 is presented in a TO-220-3 package, facilitating through-hole mounting and heat dissipation. Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 5A and 5V, and a Vce saturation of 3V at 3A and 12A. This component is engineered for efficient operation in various industrial and commercial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 100 W |
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