FJP13007H2TU-F080
TRANS NPN 400V 8A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJP13007H2TU-F080 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching applications. This through-hole component features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current rating of 8A. With a power dissipation capability of 80W and a transition frequency of 4MHz, it is well-suited for use in power supply units, lighting ballasts, and general-purpose switching circuits. The TO-220-3 package facilitates straightforward mounting and thermal management. Minimum DC current gain (hFE) is specified at 8 at 2A collector current and 5V collector-emitter voltage. The device operates reliably up to a junction temperature of 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 80 W |
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