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FJP13007H2

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FJP13007H2

TRANS NPN 400V 8A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi FJP13007H2 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a 400V collector-emitter breakdown voltage and a maximum collector current of 8A. With a power dissipation of 80W and a transition frequency of 4MHz, it is suitable for demanding power switching and amplification tasks. The device offers a minimum DC current gain (hFE) of 26 at 2A collector current and 5V collector-emitter voltage. The TO-220-3 package ensures robust thermal performance with an operating junction temperature of up to 150°C. This component finds application in power supplies, lighting control, and motor drive circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce26 @ 2A, 5V
Frequency - Transition4MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max80 W

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