FJP13007H1TU-F080
TRANS NPN 400V 8A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJP13007H1TU-F080 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding power switching applications. This device features a maximum collector-emitter breakdown voltage of 400 V and a continuous collector current capability of 8 A, with a maximum power dissipation of 80 W. The transistor type is NPN, and it operates within a junction temperature range of -65°C to 150°C. Key electrical parameters include a minimum DC current gain (hFE) of 8 at 2 A and 5 V, and a transition frequency of 4 MHz. The saturation voltage (Vce Sat) is specified at 3 V maximum for an input base current of 2 A driving a collector current of 8 A. The FJP13007H1TU-F080 is provided in a TO-220-3 package suitable for through-hole mounting. This component is commonly utilized in power supply units, lighting control, and general-purpose high-voltage switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 80 W |
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