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FJP13007H1

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FJP13007H1

TRANS NPN 400V 8A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJP13007H1 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a 400V collector-emitter breakdown voltage and a continuous collector current capability of 8A, this transistor is suitable for power switching and amplification circuits. Its 80W maximum power dissipation and 4MHz transition frequency allow for efficient operation in various power supply designs, lighting controls, and motor drive circuits. The FJP13007H1 is housed in a standard TO-220-3 package, facilitating easy through-hole mounting. Key specifications include a minimum DC current gain (hFE) of 15 at 2A, 5V, and a saturation voltage of 3V at 2A collector current. This component is commonly utilized in consumer electronics and industrial equipment requiring robust power handling.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 2A, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Frequency - Transition4MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max80 W

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