FJN965BU
TRANS NPN 20V 5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJN965BU is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component offers a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 5A. It features a transition frequency of 150MHz and a maximum power dissipation of 750mW. The device exhibits a minimum DC current gain (hFE) of 230 at 500mA collector current and 2V collector-emitter voltage. Saturation voltage at 3A collector current and 100mA base current is specified at 1V. The maximum collector cutoff current is 1µA. This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 3A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 230 @ 500mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 750 mW |
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