FJN13003BU
TRANS NPN 400V 1.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJN13003BU is an NPN bipolar junction transistor designed for applications requiring high voltage and moderate current handling. This component features a maximum collector emitter breakdown voltage of 400V and a continuous collector current capability of 1.5A. With a transition frequency of 4MHz and a maximum power dissipation of 1.1W, it is suitable for use in power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 9 at 500mA and 2V. The saturation voltage (Vce Sat) is specified at 3V maximum at 500mA collector current and 1.5A collector current. The FJN13003BU is housed in a TO-92-3 (TO-226-3) through-hole package, rated for operation up to 150°C (TJ). This transistor finds application in power supplies, lighting control, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 500mA, 1.5A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 9 @ 500mA, 2V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 1.1 W |
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