FJD3076TF
TRANS NPN 32V 2A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJD3076TF is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a 32V collector-emitter breakdown voltage and a maximum collector current of 2A, with a collector cutoff current of 1µA. The DC current gain (hFE) is a minimum of 130 at 500mA and 3V. With a transition frequency of 100MHz and a maximum power dissipation of 1W, the FJD3076TF is suitable for power management and switching applications. It is supplied in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) package, presented on tape and reel. This device finds utility in industrial automation, consumer electronics, and automotive systems. The saturation voltage (Vce Saturation) is a maximum of 800mV at 200mA and 2A.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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