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FJC2383OTF

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FJC2383OTF

TRANS NPN 160V 1A SOT89-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJC2383OTF is an NPN bipolar junction transistor designed for demanding applications. Featuring a collector-emitter breakdown voltage of 160V and a continuous collector current capability of 1A, this device is well-suited for power switching and amplification circuits. Its transition frequency of 100MHz allows for operation in moderate RF applications. The maximum power dissipation is 500mW, and it operates efficiently across a wide temperature range up to 150°C. The FJC2383OTF is housed in a compact SOT-89-3 (TO-243AA) surface-mount package, supplied on tape and reel for automated assembly. Key parameters include a minimum DC current gain (hFE) of 100 at 200mA and 5V, and a collector cutoff current (ICBO) of 1µA. This component finds utility in industrial control, power management, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 200mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSOT-89-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max500 mW

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