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FJC1963QTF

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FJC1963QTF

TRANS NPN 30V 3A SOT89-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi FJC1963QTF is an NPN bipolar junction transistor (BJT) designed for efficient current amplification. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 3A. It offers a minimum DC current gain (hFE) of 120 at 500mA collector current and 2V collector-emitter voltage. The transistor exhibits a saturation voltage of 450mV at 150mA base current and 1.5A collector current. With a maximum power dissipation of 500mW, it is packaged in a SOT-89-3 (TO-243AA) surface-mount configuration, supplied on tape and reel. The FJC1963QTF is suitable for applications in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Frequency - Transition-
Supplier Device PackageSOT-89-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max500 mW

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