FJBE2150DTU
TRANS NPN 800V 2A D2PAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number FJBE2150DTU from the ESBC™ series. This surface mount device, housed in a TO-263 (D2PAK) package, offers a 800V collector-emitter breakdown voltage and a continuous collector current of 2A. It features a maximum power dissipation of 110W and a transition frequency of 5MHz. The DC current gain (hFE) is a minimum of 20 at 400mA collector current and 3V Vce. Saturation voltage (Vce Sat) is specified at a maximum of 250mV at 330mA base current and 1A collector current. Operating temperature range is -55°C to 125°C. This component is suitable for applications in power supply, industrial motor control, and lighting.
Additional Information
Series: ESBC™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 125°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 330mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 400mA, 3V |
| Frequency - Transition | 5MHz |
| Supplier Device Package | TO-263 (D2PAK) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 110 W |
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