FJB102TM
TRANS NPN DARL 100V 8A D2PAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's FJB102TM is an NPN Darlington bipolar junction transistor designed for high-power switching applications. This component features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 8A, with a power dissipation capability of 80W. Its high DC current gain (hFE) is a minimum of 1000 at 3A and 4V, characteristic of Darlington configurations. The transistor exhibits a Vce saturation of 2.5V maximum at 80mA base current and 8A collector current. Packaged in a TO-263-3, D2PAK surface mount configuration, it is supplied on tape and reel. The FJB102TM is suitable for use in industrial automation and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-263 (D2PAK) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 80 W |
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