FJAF6916TU
TRANS NPN 800V 16A TO3PFManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJAF6916TU is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component, housed in a TO-3PF package, boasts a maximum collector-emitter breakdown voltage of 800 V and a continuous collector current capability of 16 A, with a maximum power dissipation of 60 W. It features a minimum DC current gain (hFE) of 6 at 8.5 A and 5 V. The saturation voltage (Vce(sat)) is specified at a maximum of 3 V for an operating point of 2.5 A base current and 10 A collector current. The transistor is rated for operation up to 150°C (TJ) and is supplied in tube packaging. This device finds application in power supply units, motor control, and lighting ballast circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2.5A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 8.5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 60 W |
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