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FJAF6910TU

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FJAF6910TU

TRANS NPN 800V 10A TO3PF

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi FJAF6910TU is an NPN bipolar junction transistor (BJT) designed for high-voltage and high-current applications. This through-hole component features a collector-emitter breakdown voltage of 800V and a maximum continuous collector current of 10A. With a power dissipation of 60W, it is suitable for demanding power switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 7 at 6A and 5V, and a Vce saturation of 3V at 1.5A and 6A. The TO-3PF package ensures robust thermal management for reliable operation up to 150°C (TJ). This device is commonly utilized in power supply units, lighting ballasts, and industrial motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 1.5A, 6A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce7 @ 6A, 5V
Frequency - Transition-
Supplier Device PackageTO-3PF
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)800 V
Power - Max60 W

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