FJAF4310OTU
TRANS NPN 140V 10A TO3PFManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJAF4310OTU is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-3PF package. This device features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 140 V. With a transition frequency (ft) of 30 MHz and a maximum power dissipation of 80 W, it is suitable for applications requiring robust amplification and switching capabilities. The DC current gain (hFE) is specified at a minimum of 70 at 3 A collector current and 4 V collector-emitter voltage. The saturation voltage (Vce(sat)) is 500 mV at 500 mA base current and 5 A collector current. It is engineered for operation up to a junction temperature of 150°C. This component finds application in power supply circuits, audio amplification, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 80 W |
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