FJAF4210OTU
TRANS PNP 140V 10A TO3PFManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJAF4210OTU is a high-performance PNP bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This through-hole component features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 140 V, enabling it to handle significant power levels up to 80 W. The FJAF4210OTU offers a typical DC current gain (hFE) of 70 at 3 A and 4 V, with a transition frequency of 30 MHz, suitable for a range of audio amplification and power control circuits. The device exhibits a Vce(sat) of 500 mV at 500 mA and 5 A, ensuring efficient operation. With a maximum junction temperature of 150°C, it is well-suited for demanding industrial and consumer electronics, including audio amplifiers, power supplies, and motor control systems. The component is supplied in a TO-3PF package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3PF |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 80 W |
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