FJA4313OTU
TRANS NPN 250V 17A TO3PNManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJA4313OTU is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector-emitter breakdown voltage (Vce) of 250V and a continuous collector current (Ic) capability of 17A. With a power dissipation rating of 130W and a transition frequency (fT) of 30MHz, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 35 at 7A and 5V. Saturation voltage (Vce(sat)) is specified at a maximum of 3V for an 8A collector current driven by an 800mA base current. This device is housed in a TO-3PN package (TO-3P-3, SC-65-3) for through-hole mounting and operates at junction temperatures up to 150°C. The FJA4313OTU finds application in power supplies, audio amplifiers, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 7A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3PN |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 130 W |
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