Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

FJA4210RTU

Banner
productimage

FJA4210RTU

TRANS PNP 140V 10A TO3P

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi FJA4210RTU is a PNP bipolar junction transistor designed for demanding applications. Featuring a maximum collector current of 10 A and a collector-emitter breakdown voltage of 140 V, this device offers robust performance. It boasts a transition frequency of 30 MHz and a significant power dissipation capability of 100 W. The DC current gain (hFE) is a minimum of 50 at 3 A and 4 V, with a Vce(sat) of 500 mV at 500 mA and 5 A. This through-hole component is housed in a TO-3P-3, SC-65-3 package, suitable for use in power supply, audio amplifier, and general-purpose switching applications. The operating junction temperature range extends to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 500mA, 5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 3A, 4V
Frequency - Transition30MHz
Supplier Device PackageTO-3P
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max100 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCH6203-TL-E

TRANS NPN 50V 1A 6MCPH

product image
BC560CTA

TRANS PNP 45V 0.1A TO92-3

product image
MJE371G

TRANS PNP 40V 4A TO126