FJA4210OTU
TRANS PNP 140V 10A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi FJA4210OTU is a PNP Bipolar Junction Transistor (BJT) designed for robust power applications. This component features a 140V collector-emitter breakdown voltage and a maximum collector current of 10A, making it suitable for power switching and amplification circuits. With a transition frequency of 30MHz and a power dissipation capability of 100W, it supports demanding operational requirements. The device exhibits a minimum DC current gain (hFE) of 70 at 3A and 4V, and a saturation voltage (Vce) of 500mV at 500mA and 5A. Manufactured in a TO-3P-3, SC-65-3 package, it utilizes a through-hole mounting type for secure integration into printed circuit boards. The operating junction temperature can reach up to 150°C. This transistor finds application in industries such as industrial automation, power supplies, and audio amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A, 4V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 100 W |
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