FJA13009TU
TRANS NPN 400V 12A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi FJA13009TU is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a collector-emitter breakdown voltage of 400V and a continuous collector current capability of 12A, this device is suited for power switching and amplification tasks. Its maximum power dissipation is rated at 130W, with a transition frequency of 4MHz ensuring effective operation in switching power supplies and motor control circuits. The transistor exhibits a minimum DC current gain (hFE) of 8 at 5A collector current and 5V Vce. The saturation voltage (Vce(sat)) is a maximum of 3V at 3A base current and 12A collector current. Packaged in a TO-3P through-hole configuration, the FJA13009TU is suitable for industrial power systems, lighting controls, and consumer electronics. Operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 130 W |
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