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ECH8102-TL-H

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ECH8102-TL-H

TRANS PNP 30V 12A 8ECH

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PNP Bipolar Junction Transistor, part number ECH8102-TL-H. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 12A. The frequency transition is specified at 140MHz, with a minimum DC current gain (hFE) of 200 at 500mA and 2V. Power dissipation is rated at 1.6W, and the device operates up to 150°C junction temperature. Saturation voltage (Vce Sat) is a maximum of 135mV at 300mA collector current and 6A base current. The ECH8102-TL-H is supplied in an 8-ECH surface mount package, delivered on tape and reel (TR). This component is suitable for applications in power management and general-purpose switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic135mV @ 300mA, 6A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA, 2V
Frequency - Transition140MHz
Supplier Device Package8-ECH
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max1.6 W

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