D45C12G
TRANS PNP 80V 4A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi D45C12G, a PNP bipolar junction transistor, offers robust performance for demanding applications. This through-hole component, housed in a TO-220 package, features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce(max)) of 80V. With a transition frequency (fT) of 40MHz and a maximum power dissipation of 30W, it is suitable for power switching and amplification circuits. Key parameters include a minimum DC current gain (hFE) of 40 at 200mA and 1V, and a saturation voltage (Vce(sat)) of 500mV at 50mA and 1A. The collector cutoff current (Icbo) is rated at a maximum of 100nA. This device operates within an extended temperature range of -55°C to 150°C. Applications span industrial power control, audio amplification, and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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