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D44C12G

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D44C12G

TRANS NPN 80V 4A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi D44C12G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) rating of 4 A and a collector-emitter breakdown voltage (Vce(max)) of 80 V. It offers a minimum DC current gain (hFE) of 40 at 200 mA and 1 V, with a transition frequency (fT) of 40 MHz. The D44C12G has a maximum power dissipation of 30 W and a Vce(sat) of 500 mV at 50 mA and 1 A. Packaged in a TO-220-3 through-hole configuration, this transistor is suitable for use in industrial control, power management, and consumer electronics. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Frequency - Transition40MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max30 W

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