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CPH6153-P-TL-E

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CPH6153-P-TL-E

TRANS PNP 20V 3A 6CPH

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi CPH6153-P-TL-E is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 3A. It features a transition frequency of 500MHz and a power dissipation capability of 1.3W. The device exhibits a minimum DC current gain (hFE) of 200 at 100mA collector current and 2V collector-emitter voltage. Collector-emitter saturation voltage is specified at a maximum of 195mV for a base current of 75mA and collector current of 1.5A. The cutoff current (ICBO) is a maximum of 100nA. The operating junction temperature range extends to 150°C. Supplied in Tape & Reel (TR) packaging, the CPH6153-P-TL-E utilizes the 6-CPH (SOT-23-6 Thin, TSOT-23-6) package. This transistor is suitable for use in power management and general switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic195mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition500MHz
Supplier Device Package6-CPH
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)20 V
Power - Max1.3 W

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