CPH3205-M-TL-E
TRANS NPN 50V 3A 3CPHManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi NPN Bipolar Junction Transistor (BJT), part number CPH3205-M-TL-E, is designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 3A. With a transition frequency of 380MHz, it is suitable for moderate frequency circuit designs. The DC current gain (hFE) is rated at a minimum of 200 at 100mA and 2V. Saturation voltage (Vce(sat)) is specified at a maximum of 210mV at 100mA and 2A. The transistor is housed in a 3-CPH (TO-236-3, SC-59, SOT-23-3) surface-mount package, supplied on tape and reel. Dissipation is limited to 900mW. This component finds utility in various industrial automation, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 380MHz |
| Supplier Device Package | 3-CPH |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 900 mW |
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