CPH3115-TL-E
TRANS PNP 30V 1.5A 3CPHManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number CPH3115-TL-E. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 1.5A. It offers a transition frequency of 450MHz and a maximum power dissipation of 900mW. The DC current gain (hFE) is a minimum of 200 at 100mA collector current and 2V Vce. Vce(sat) is specified at a maximum of 375mV with 15mA base current and 750mA collector current. The collector cutoff current (ICBO) is a maximum of 100nA. This PNP transistor is housed in a 3-CPH (TO-236-3, SC-59, SOT-23-3) surface mount package, supplied on tape and reel. It is suitable for applications requiring efficient switching and amplification in areas such as consumer electronics and industrial control. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 375mV @ 15mA, 750mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 450MHz |
| Supplier Device Package | 3-CPH |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 900 mW |
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