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CPH3101-TL-E

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CPH3101-TL-E

TRANS PNP 30V 2A 3CPH

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi CPH3101-TL-E is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 30V and a continuous collector current capability of 2A, this device is suitable for power management and signal control in various electronic systems. The 150MHz transition frequency ensures efficient operation in moderate-frequency circuits. With a maximum power dissipation of 900mW and an operating junction temperature of up to 150°C, the CPH3101-TL-E is built for reliability in demanding environments. The device is housed in a compact 3-CPH surface-mount package, facilitating high-density board designs. Typical applications include power supplies, motor control, and audio amplification. The minimum DC current gain (hFE) is 200 at 100mA collector current and 2V collector-emitter voltage. Collector cutoff current (ICBO) is a maximum of 100nA. Saturation voltage (Vce(sat)) is specified at 600mV maximum for 1.5A collector current driven by 75mA base current. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Gull Wing
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition150MHz
Supplier Device Package3-CPH
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max900 mW

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