BUX85G
TRANS NPN 450V 2A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BUX85G is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 450V and a continuous collector current capability of 2A. With a maximum power dissipation of 50W and a transition frequency of 4MHz, the BUX85G is suitable for use in power supply circuits, lighting control, and general-purpose switching applications. The device exhibits a DC current gain (hFE) of at least 30 at 100mA collector current and 5V collector-emitter voltage. Its saturation voltage (Vce Saturation) is specified at a maximum of 1V when operating at 200mA base current and 1A collector current. The BUX85G is housed in a standard TO-220-3 package, facilitating through-hole mounting. The operating temperature range for this onsemi transistor is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 50 W |
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