BUV27G
TRANS NPN 120V 12A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BUV27G is an NPN bipolar junction transistor (BJT) designed for power switching applications. This component features a collector-emitter breakdown voltage of 120 V and a continuous collector current capability of 12 A. With a maximum power dissipation of 70 W, the BUV27G is suitable for demanding applications. It is packaged in a TO-220-3 through-hole configuration, facilitating easy integration into printed circuit boards. The transistor exhibits a saturation voltage of 1.5 V at 800 mA collector current and 8 A base current, ensuring efficient switching. Operating temperature ranges from -65°C to 150°C. This device finds utility in industrial power supplies, motor control, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 70 W |
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