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BUV26G

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BUV26G

TRANS NPN 90V 20A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi BUV26G NPN Bipolar Junction Transistor (BJT). This through-hole component, packaged in a TO-220-3, offers a 90V collector-emitter breakdown voltage and a maximum collector current of 20A. It is rated for 85W of power dissipation and features a Vce(sat) of 1.5V at 1.2A/12A. The operating temperature range is -65°C to 175°C. This device is suitable for applications in power supply regulation, audio amplification, and general-purpose switching circuits within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.2A, 12A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)90 V
Power - Max85 W

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