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BUL642D2G

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BUL642D2G

TRANS NPN 440V 3A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BUL642D2G is an NPN bipolar junction transistor designed for high-voltage applications. This component features a maximum collector-emitter breakdown voltage of 440V and can handle a continuous collector current of up to 3A. With a power dissipation capability of 75W and a transition frequency of 13MHz, it is suitable for power switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 16 at 500mA and 1V, and a saturation voltage (Vce(sat)) of 1.5V at 200mA and 2A. Packaged in a TO-220-3 through-hole configuration, the BUL642D2G is commonly utilized in power supply units, lighting controls, and general industrial power management systems. It operates across an extended temperature range of -65°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 200mA, 2A
Current - Collector Cutoff (Max)200µA
DC Current Gain (hFE) (Min) @ Ic, Vce16 @ 500mA, 1V
Frequency - Transition13MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)440 V
Power - Max75 W

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