BUH50G
TRANS NPN 500V 4A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi SWITCHMODE™ NPN Bipolar Junction Transistor, part number BUH50G. This device features a 500V collector-emitter breakdown voltage and a continuous collector current capability of 4A. Designed for power applications, it dissipates up to 50W. The transistor exhibits a minimum DC current gain (hFE) of 5 at 2A collector current and 5V Vce, with a Vce(sat) of 1V at 1A base current and 3A collector current. Its transition frequency is 4MHz. The BUH50G is housed in a standard TO-220 package, suitable for through-hole mounting. Applications include power switching and amplification in industrial and consumer electronics. The device operates within a temperature range of -65°C to 150°C.
Additional Information
Series: SWITCHMODE™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 3A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 2A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| Power - Max | 50 W |
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