BUD42DT4G
TRANS NPN 350V 4A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
This onsemi NPN Bipolar Junction Transistor (BJT), part number BUD42DT4G, is specified for high-voltage applications. It features a 350 V collector-emitter breakdown voltage and a continuous collector current rating of 4 A. The transistor offers a power dissipation of 25 W and a low saturation voltage of 1 V at 2 A collector current and 500 mA base current. Minimum DC current gain (hFE) is 10 at 2 A collector current and 5 V collector-emitter voltage. The device is packaged in a TO-252-3, DPAK surface-mount package, suitable for automated assembly. Its operating temperature range is -65°C to 150°C. This component is commonly utilized in power supply circuits and general-purpose switching applications within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 25 W |