Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BUD42DG

Banner
productimage

BUD42DG

TRANS NPN 350V 4A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BUD42DG is a high-voltage NPN bipolar junction transistor. This component offers a collector-emitter breakdown voltage of 350 V and a continuous collector current capability of 4 A, with a maximum power dissipation of 25 W. It features a saturation voltage of 1 V at 500 mA collector current and 2 A collector current. The DC current gain (hFE) is a minimum of 10 at 2 A collector current and 5 V collector-emitter voltage. Designed for surface mounting, it is supplied in a TO-252-3, DPAK package. This transistor is suitable for applications in power switching and amplification across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max25 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCH6203-TL-E

TRANS NPN 50V 1A 6MCPH

product image
BC560CTA

TRANS PNP 45V 0.1A TO92-3

product image
MJE371G

TRANS PNP 40V 4A TO126