Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BUD42D-1G

Banner
productimage

BUD42D-1G

TRANS NPN 350V 4A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi BUD42D-1G is a high-voltage NPN bipolar junction transistor (BJT) designed for robust power switching applications. This TO-252-3, DPAK packaged device offers a collector-emitter breakdown voltage of 350 V and a continuous collector current capability of 4 A, with a maximum power dissipation of 25 W. It features a saturation voltage of 1 V at 2 A collector current with a 500 mA base current, and a minimum DC current gain (hFE) of 10 at 2 A collector current and 5 V collector-emitter voltage. The operating temperature range spans from -65°C to 150°C. This component is suitable for use in power supply circuits, motor control, and general high-voltage switching applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max25 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy