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BU508AFTBTU

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BU508AFTBTU

TRANS NPN 700V 5A TO3PF

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BU508AFTBTU is an NPN bipolar junction transistor designed for high-voltage applications. Featuring a 700V collector-emitter breakdown voltage and a maximum collector current of 5A, this component is rated for 60W of power dissipation. The TO-3PF package with through-hole mounting facilitates robust thermal management. Minimum DC current gain is specified at 2.25 at 4.5A and 5V. Collector cutoff current is a maximum of 1mA. The saturation voltage (Vce(sat)) is a maximum of 1V at 2A base current and 4.5A collector current. This transistor is suitable for power switching and amplification circuits in industrial, automotive, and consumer electronics sectors. It is supplied in a tube.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 2A, 4.5A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce2.25 @ 4.5A, 5V
Frequency - Transition-
Supplier Device PackageTO-3PF
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)700 V
Power - Max60 W

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