BSV52
TRANS NPN 12V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BSV52 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This SOT-23-3 packaged device offers a collector-emitter breakdown voltage (Vce) of 12V and a continuous collector current (Ic) capability of up to 200mA. The transistor exhibits a minimum DC current gain (hFE) of 40 at 10mA and 1V, with a transition frequency (fT) of 400MHz, making it suitable for moderate frequency operations. Its power dissipation is rated at 225mW. Key parameters include a low collector cutoff current (ICBO) of 100nA and a saturation voltage (Vce(sat)) of 400mV at 5mA base current and 50mA collector current. The BSV52 is widely utilized in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | 400MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 225 mW |
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