BSS64
TRANS NPN 80V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi BSS64, an NPN bipolar junction transistor (BJT), offers robust performance for various applications. This SOT-23-3 packaged component features an 80V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 60MHz and a power dissipation of 350mW, it is suitable for general-purpose switching and amplification tasks. Key parameters include a minimum DC current gain (hFE) of 20 at 10mA/1V and a Vce saturation of 200mV at 15mA/50mA. The device operates within a temperature range of -55°C to 150°C. The BSS64 is commonly found in industrial control, consumer electronics, and automotive systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 15mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 350 mW |
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