BSR50
TRANS NPN DARL 45V 1.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BSR50 is an NPN Darlington bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 45 V and a continuous collector current capability of up to 1.5 A. With a substantial minimum DC current gain (hFE) of 2000 at an Ic of 500mA and Vce of 10V, the BSR50 is well-suited for applications requiring high current gain. It has a maximum power dissipation of 625 mW and a collector cutoff current (ICBO) of 50 nA. The saturation voltage (Vce Sat) is rated at 1.6 V maximum at an Ib of 4mA and Ic of 1A. This through-hole device is supplied in a TO-92-3 package, facilitating integration into various circuit designs. The operating temperature range is -55°C to 150°C. The BSR50 finds utility in power supply circuits, relay drivers, and general amplification stages across multiple industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 4mA, 1A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 625 mW |
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