BSR18B
TRANS PNP 40V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BSR18B is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 200mA. With a maximum power dissipation of 230mW and a DC current gain (hFE) of at least 110 at 10mA and 1V, it offers reliable performance in demanding environments. The transistor's saturation voltage (Vce(sat)) is a maximum of 400mV at 5mA base current and 50mA collector current. Packaged in a compact SOT-23-3 surface-mount configuration and supplied on tape and reel, the BSR18B is suitable for high-density circuit designs. Its operating temperature range is -55°C to 150°C. This transistor finds application in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 230 mW |
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