BSP52T3
TRANS NPN DARL 80V 1A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BSP52T3 is an NPN Darlington bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. It offers a high DC current gain (hFE) of 2000 at 500mA and 10V. The transistor operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 800mW. The VCE(sat) is specified at 1.3V maximum for an IB of 500µA and an IC of 500mA. The device is supplied in a SOT-223 (TO-261) package, provided on tape and reel. This transistor is suitable for use in various industrial and consumer electronics applications requiring high gain switching or amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 800 mW |