BSP52
TRANS NPN DARL 80V 0.8A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BSP52 is an NPN Darlington bipolar transistor designed for high current gain applications. This device features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 800mA, with a power dissipation capability of 1W. It exhibits a minimum DC current gain (hFE) of 2000 at 500mA collector current and 10V Vce. The saturation voltage (Vce(sat)) is specified at a maximum of 1.3V when driven by 500µA base current to support 500mA collector current. The transistor is housed in a SOT-223-4 surface-mount package, suitable for automated assembly. Operating temperature range is from -55°C to 150°C (TJ). This component is commonly found in applications requiring significant current amplification, such as power switching and motor control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |