BSP50
TRANS NPN DARL 45V 0.8A SOT223-4Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi BSP50 is an NPN Darlington bipolar junction transistor designed for robust switching and amplification applications. This device features a collector-emitter breakdown voltage of 45V and a maximum continuous collector current (Ic) of 800mA. With a minimum DC current gain (hFE) of 2000 at 500mA and 10V, the BSP50 offers significant current amplification. The transistor has a maximum power dissipation of 1W and a saturation voltage (Vce Sat) of 1.3V at 500µA base current and 500mA collector current. Its operating temperature range spans from -55°C to 150°C. The BSP50 is supplied in a SOT-223-4 surface mount package, also known as TO-261-4 or TO-261AA, and is available on tape and reel. This component finds application in various industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223-4 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1 W |
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