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BSP19AT1G

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BSP19AT1G

TRANS NPN 350V 0.1A SOT223

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi BSP19AT1G is an NPN bipolar junction transistor designed for high voltage applications. This surface mount component, housed in the SOT-223 (TO-261) package, offers a breakdown voltage of 350V and a continuous collector current capability of 100mA. Its transition frequency reaches 70MHz, and it dissipates a maximum power of 800mW. The device exhibits a minimum DC current gain (hFE) of 40 at 20mA and 10V, with a Vce(sat) of 500mV at 4mA and 50mA. Typical applications include power switching and high voltage amplification in industrial and consumer electronics. The BSP19AT1G is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Frequency - Transition70MHz
Supplier Device PackageSOT-223 (TO-261)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max800 mW

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